SRC65R1K3ES. Аналоги и основные параметры
Наименование производителя: SRC65R1K3ES
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 29 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 33 ns
Cossⓘ - Выходная емкость: 13.5 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.3 Ohm
Тип корпуса: TO252 TO251 TO220F
Аналог (замена) для SRC65R1K3ES
- подборⓘ MOSFET транзистора по параметрам
SRC65R1K3ES даташит
src65r1k3es.pdf
Datasheet 1.3 , 650V, Super Junction N-Channel Power MOSFET SRC65R1K3ES General Description Symbol The Sanrise SRC65R1K3ES is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r110bs.pdf
Datasheet 110m , 650V, Super Junction N-Channel Power MOSFET SRC65R110BS General Description Symbol The Sanrise SRC65R110BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r110b.pdf
Datasheet 110m , 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r145b.pdf
Datasheet 145m , 650V, Super Junction N-Channel Power MOSFET SRC65R145B General Description Symbol The Sanrise SRC65R145B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density a
Другие MOSFET... SRC65R085BS , SRC65R100B , SRC65R100BS , SRC65R110B , SRC65R110BS , SRC65R145B , SRC65R170B , SRC65R180 , 60N06 , SRC65R220 , SRC65R220BS , SRC65R220M2 , SRC65R230BS , SRC65R290E , SRC65R330B , SRC65R330EC , SRC65R340EC .
History: FDS89161
History: FDS89161
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