Справочник MOSFET. SRC65R330EC

 

SRC65R330EC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SRC65R330EC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 27.2 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 48 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.33 Ohm
   Тип корпуса: TO263 TO252 TO251 TO220

 Аналог (замена) для SRC65R330EC

 

 

SRC65R330EC Datasheet (PDF)

 ..1. Size:2154K  sanrise-tech
src65r330ec.pdf

SRC65R330EC
SRC65R330EC

Datasheet330m, 650V, Super Junction N-Channel Power MOSFET SRC65R330ECGeneral Description SymbolThe Sanrise SRC65R330EC is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 5.1. Size:1946K  sanrise-tech
src65r330b.pdf

SRC65R330EC
SRC65R330EC

Datasheet330m, 650V, Super Junction N-Channel Power MOSFET SRC65R330BGeneral Description SymbolThe Sanrise SRC65R330B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

 7.1. Size:1169K  sanrise-tech
src65r340ec.pdf

SRC65R330EC
SRC65R330EC

Datasheet340m, 600V, Super Junction N-Channel Power MOSFET SRC65R340ECGeneral Description SymbolThe Sanrise SRC65R340EC is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.1. Size:2422K  sanrise-tech
src65r800.pdf

SRC65R330EC
SRC65R330EC

Datasheet800m, 650V, Super Junction N-Channel Power MOSFET SRC65R800General Description SymbolThe Sanrise SRC65R800 is a high voltage powerMOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and

 8.2. Size:2243K  sanrise-tech
src65r220bs.pdf

SRC65R330EC
SRC65R330EC

Datasheet220m, 650V, Super Junction N-Channel Power MOSFET SRC65R220BSGeneral Description SymbolThe Sanrise SRC65R220BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.3. Size:1010K  sanrise-tech
src65r052fb.pdf

SRC65R330EC
SRC65R330EC

Datasheet 52m 650V, Super Junction N-Channel Power MOSFET SRC65R052FB General Description Symbol The Sanrise SRC65R052FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.4. Size:1197K  sanrise-tech
src65r032fb.pdf

SRC65R330EC
SRC65R330EC

Datasheet32m, 650V, Super Junction N-Channel Power MOSFET SRC65R032FBGeneral Description SymbolThe Sanrise SRC65R032FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.5. Size:1548K  sanrise-tech
src65r230bs.pdf

SRC65R330EC
SRC65R330EC

Datasheet230m, 650V, Super Junction N-Channel Power MOSFET SRC65R230BSGeneral Description SymbolThe Sanrise SRC65R230BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.6. Size:631K  sanrise-tech
src65r650.pdf

SRC65R330EC
SRC65R330EC

Datasheet 650m, 650V, Super Junction N-Channel Power MOSFET SRC65R650 General Description Symbol The Sanrise SRC65R650 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

 8.7. Size:1096K  sanrise-tech
src65r110bs.pdf

SRC65R330EC
SRC65R330EC

Datasheet110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110BSGeneral Description SymbolThe Sanrise SRC65R110BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.8. Size:1174K  sanrise-tech
src65r040b.pdf

SRC65R330EC
SRC65R330EC

Datasheet40m, 650V, Super Junction N-Channel Power MOSFET SRC65R040BGeneral Description SymbolThe Sanrise SRC65R040B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 8.9. Size:936K  sanrise-tech
src65r110b.pdf

SRC65R330EC
SRC65R330EC

Datasheet 110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.10. Size:1881K  sanrise-tech
src65r085bs.pdf

SRC65R330EC
SRC65R330EC

Datasheet85m, 650V, Super Junction N-Channel Power MOSFET SRC65R085BSGeneral Description SymbolThe Sanrise SRC65R085BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.11. Size:1899K  sanrise-tech
src65r220m2.pdf

SRC65R330EC
SRC65R330EC

Datasheet220m, 650V, Super Junction N-Channel Power MOSFET SRC65R220M2General Description SymbolThe Sanrise SRC65R220M2 is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.12. Size:2216K  sanrise-tech
src65r600ec.pdf

SRC65R330EC
SRC65R330EC

Datasheet600m, 650V, Super Junction N-Channel Power MOSFET SRC65R600ECGeneral Description SymbolThe Sanrise SRC65R600EC is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.13. Size:1237K  sanrise-tech
src65r082b.pdf

SRC65R330EC
SRC65R330EC

Datasheet82m, 650V, Super Junction N-Channel Power MOSFET SRC65R082BGeneral Description SymbolThe Sanrise SRC65R082B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 8.14. Size:2444K  sanrise-tech
src65r145b.pdf

SRC65R330EC
SRC65R330EC

Datasheet145m, 650V, Super Junction N-Channel Power MOSFET SRC65R145BGeneral Description SymbolThe Sanrise SRC65R145B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

 8.15. Size:1267K  sanrise-tech
src65r072b.pdf

SRC65R330EC
SRC65R330EC

Datasheet72m, 650V, Super Junction N-Channel Power MOSFET SRC65R072BGeneral Description SymbolThe Sanrise SRC65R072B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 8.16. Size:517K  sanrise-tech
src65r220.pdf

SRC65R330EC
SRC65R330EC

Datasheet 220m, 650V, PDFN8*8, Super Junction N-Channel Power MOSFET SRC65R220 General Description Symbol The Sanrise SRC65R220 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 8.17. Size:1301K  sanrise-tech
src65r042b.pdf

SRC65R330EC
SRC65R330EC

Datasheet42m, 650V, Super Junction N-Channel Power MOSFET SRC65R042BGeneral Description SymbolThe Sanrise SRC65R042B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 8.18. Size:851K  sanrise-tech
src65r1k3es.pdf

SRC65R330EC
SRC65R330EC

Datasheet 1.3, 650V, Super Junction N-Channel Power MOSFET SRC65R1K3ES General Description Symbol The Sanrise SRC65R1K3ES is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.19. Size:711K  sanrise-tech
src65r290e.pdf

SRC65R330EC
SRC65R330EC

Datasheet 290m, 650V, Super Junction N-Channel Power MOSFET SRC65R290E General Description Symbol The Sanrise SRC65R290E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.20. Size:472K  sanrise-tech
src65r650b.pdf

SRC65R330EC
SRC65R330EC

Datasheet 650m, 650V, Super Junction N-Channel Power MOSFET SRC65R650B General Description Symbol The Sanrise SRC65R650B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.21. Size:2195K  sanrise-tech
src65r800m2.pdf

SRC65R330EC
SRC65R330EC

Datasheet800m, 650V, Super Junction N-Channel Power MOSFET SRC65R800M2General Description SymbolThe Sanrise SRC65R800M2 is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.22. Size:506K  sanrise-tech
src65r800e.pdf

SRC65R330EC
SRC65R330EC

Datasheet 800m, 650V, Super Junction N-Channel Power MOSFET SRC65R800E General Description Symbol The Sanrise SRC65R800E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.23. Size:553K  sanrise-tech
src65r180.pdf

SRC65R330EC
SRC65R330EC

Datasheet 180m, 650V, Super Junction N-Channel Power MOSFET SRC65R180 General Description Symbol The Sanrise SRC65R180 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

 8.24. Size:1372K  sanrise-tech
src65r024b.pdf

SRC65R330EC
SRC65R330EC

Datasheet24m, 650V, Super Junction N-Channel Power MOSFET SRC65R024BGeneral Description SymbolThe Sanrise SRC65R024B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 8.25. Size:907K  sanrise-tech
src65r085b.pdf

SRC65R330EC
SRC65R330EC

Datasheet 85m, 650V, Super Junction N-Channel Power MOSFET SRC65R085B General Description Symbol The Sanrise SRC65R085B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.26. Size:2005K  sanrise-tech
src65r170b.pdf

SRC65R330EC
SRC65R330EC

Datasheet170m, 650V, Super Junction N-Channel Power MOSFET SRC65R170BGeneral Description SymbolThe Sanrise SRC65R170B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

 8.27. Size:1274K  sanrise-tech
src65r100b.pdf

SRC65R330EC
SRC65R330EC

Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BGeneral Description SymbolThe Sanrise SRC65R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

 8.28. Size:2043K  sanrise-tech
src65r068bs.pdf

SRC65R330EC
SRC65R330EC

Datasheet68m, 650V, Super Junction N-Channel Power MOSFET SRC65R068BSGeneral Description SymbolThe Sanrise SRC65R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.29. Size:1291K  sanrise-tech
src65r068bstl.pdf

SRC65R330EC
SRC65R330EC

Datasheet68m, 650V, Super Junction N-Channel Power MOSFET SRC65R068BSGeneral Description SymbolThe Sanrise SRC65R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.30. Size:1851K  sanrise-tech
src65r100bs.pdf

SRC65R330EC
SRC65R330EC

Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BSGeneral Description SymbolThe Sanrise SRC65R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

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