December 2011FDMQ8203GreenBridgeTM Series of High-Efficiency Bridge RectifiersDual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 m P-Channel: -80 V, -6 A, 190 mFeatures General DescriptionQ1/Q4: N-ChannelThis quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Max rDS(on) = 110 m at VGS = 10 V, ID = 3

April 2013FDMQ86530LGreenBridgeTM Series of High-Efficiency Bridge RectifiersN-Channel PowerTrench MOSFET 60 V, 8 A, 17.5 mFeatures General DescriptionThis Quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 17.5 m at VGS = 10 V, ID = 8 Apower dissipation over diode bridge. Max rDS(on) = 23 m at VGS = 6 V, ID = 7 A Max rDS(on) = 25 m at VGS = 4.5

July 2012FDMQ8403GreenBridgeTM Series of High-Efficiency Bridge RectifiersN-Channel PowerTrench MOSFET 100 V, 6 A, 110 mFeatures General DescriptionThis quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 110 m at VGS = 10 V, ID = 3 Apower dissipation over diode bridge. Max rDS(on) = 175 m at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur