FDMQ8203. Аналоги и основные параметры
Наименование производителя: FDMQ8203
Тип транзистора: MOSFET
Полярность: NP
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 22 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: POWER45
Аналог (замена) для FDMQ8203
- подборⓘ MOSFET транзистора по параметрам
FDMQ8203 даташит
fdmq8203.pdf
December 2011 FDMQ8203 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel 100 V, 6 A, 110 m P-Channel -80 V, -6 A, 190 m Features General Description Q1/Q4 N-Channel This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Max rDS(on) = 110 m at VGS = 10 V, ID = 3
fdmq86530l.pdf
April 2013 FDMQ86530L GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET 60 V, 8 A, 17.5 m Features General Description This Quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 17.5 m at VGS = 10 V, ID = 8 A power dissipation over diode bridge. Max rDS(on) = 23 m at VGS = 6 V, ID = 7 A Max rDS(on) = 25 m at VGS = 4.5
fdmq8403.pdf
July 2012 FDMQ8403 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET 100 V, 6 A, 110 m Features General Description This quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 110 m at VGS = 10 V, ID = 3 A power dissipation over diode bridge. Max rDS(on) = 175 m at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD
fdmq86530l.pdf
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Список транзисторов
Обновления
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