SRC70R670E. Аналоги и основные параметры
Наименование производителя: SRC70R670E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 59 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 27 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.67 Ohm
Аналог (замена) для SRC70R670E
- подборⓘ MOSFET транзистора по параметрам
SRC70R670E даташит
src70r670e.pdf
Datasheet 670m , 700V, Super Junction N-Channel Power MOSFET SRC70R670E General Description Symbol The Sanrise SRC70R670E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src70r900.pdf
Datasheet 900m , 700V, Super Junction N-Channel Power MOSFET SRC70R900 General Description Symbol The Sanrise SRC70R900 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and
src70r048b.pdf
Datasheet 48m , 700V, Super Junction N-Channel Power MOSFET SRC70R048B General Description Symbol The Sanrise SRC70R048B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density an
src70r380e.pdf
Datasheet 380m , 700V, Super Junction N-Channel Power MOSFET SRC70R380E General Description Symbol The Sanrise SRC70R380E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Другие IGBT... SRC65R650, SRC65R650B, SRC65R800, SRC65R800E, SRC65R800M2, SRC70R048B, SRC70R230, SRC70R380E, IRF640N, SRC70R900, SRH03P098LMTR-G, SRH03P098LD33TR-G, SRH03P142LMTR-G, SRH03P142LD33TR-G, SRH03P142LDTR-G, SRH04N260L, SRH04P500L
History: AM40N06-28D | AP18P10GK-HF | WMO190N15HG4 | AM3438NE | RHP030N03 | AM4494N | WMO25N10T1
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