Справочник MOSFET. SRC70R670E

 

SRC70R670E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SRC70R670E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 59 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17.8 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 27 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.67 Ohm
   Тип корпуса: TO252 TO220F

 Аналог (замена) для SRC70R670E

 

 

SRC70R670E Datasheet (PDF)

 ..1. Size:521K  sanrise-tech
 src70r670e.pdf

SRC70R670E SRC70R670E

Datasheet 670m, 700V, Super Junction N-Channel Power MOSFET SRC70R670E General Description Symbol The Sanrise SRC70R670E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.1. Size:2266K  sanrise-tech
 src70r900.pdf

SRC70R670E SRC70R670E

Datasheet900m, 700V, Super Junction N-Channel Power MOSFET SRC70R900General Description SymbolThe Sanrise SRC70R900 is a high voltage powerMOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and

 8.2. Size:1409K  sanrise-tech
 src70r048b.pdf

SRC70R670E SRC70R670E

Datasheet48m, 700V, Super Junction N-Channel Power MOSFET SRC70R048BGeneral Description SymbolThe Sanrise SRC70R048B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 8.3. Size:566K  sanrise-tech
 src70r380e.pdf

SRC70R670E SRC70R670E

Datasheet 380m, 700V, Super Junction N-Channel Power MOSFET SRC70R380E General Description Symbol The Sanrise SRC70R380E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.4. Size:749K  sanrise-tech
 src70r230.pdf

SRC70R670E SRC70R670E

Datasheet 230m, 700V, Super Junction N-Channel Power MOSFET SRC70R230 General Description Symbol The Sanrise SRC70R230 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

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