SRT03N023L - описание и поиск аналогов

 ..1. Size:1027K  sanrise-tech
 srt03n023l.pdf 

Datasheet 2.3m , 30V, N-Channel Power MOSFET SRT03N023L General Description Symbol The Sanrise SRT03N023L uses advanced split Drain 5,6,7,8 gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor driver, BMS, Gate 4 DC-DC converter and power management. The SRT03N023L break down voltage is 30V Sour

 5.1. Size:1002K  sanrise-tech
 srt03n023h.pdf 

Datasheet 2.3m , 30V, N-Channel Power MOSFET SRT03N023H General Description Symbol The Sanrise SRT03N023H uses advanced split Drain 5,6,7,8 gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor driver, BMS, Gate 4 DC-DC converter and power management. The SRT03N023H break down voltage is 30V Sour

 6.1. Size:1277K  sanrise-tech
 srt03n020l.pdf 

Datasheet 2.0m , 30V, N-Channel Power MOSFET SRT03N020L General Description Symbol The Sanrise SRT03N020L uses advanced split Drain 5,6,7,8 gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor driver, BMS, Gate 4 DC-DC converter and power management. The SRT03N020L break down voltage is 30V Sour

 7.1. Size:1015K  sanrise-tech
 srt03n050ld56tr-g.pdf 

Datasheet 5.0m , 30V, N-Channel Power MOSFET SRT03N050LD56TR-G General Description Symbol The Sanrise SRT03N050LD56TR-G is a high Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which S

 7.2. Size:1187K  sanrise-tech
 srt03n010ld56.pdf 

Datasheet 1.0m , 30V, N-Channel Power MOSFET SRT03N010LD56TR-G General Description Symbol The Sanrise SRT03N010LD56TR-G uses Drain 5,6,7,8 advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4 driver, BMS, DCDC converter and power management. Source 1,2,3 The SRT03N010LD56T

 7.3. Size:1146K  sanrise-tech
 srt03n010ld56tr-gs.pdf 

Datasheet 1.0m , 30V, N-Channel Power MOSFET SRT03N010LD56TR-GS General Description Symbol The Sanrise SRT03N010LD56TR-GS uses Drain 5,6,7,8 advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4 driver, BMS, DCDC converter and power management. Source 1,2,3 The SRT03N010LD5

 7.4. Size:1387K  sanrise-tech
 srt03n016l.pdf 

Datasheet 1.6m , 30V, N-Channel Power MOSFET SRT03N016L General Description Symbol The Sanrise SRT03N016L is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding e

 7.5. Size:915K  sanrise-tech
 srt03n011l.pdf 

Datasheet 1.1m , 30V, N-Channel Power MOSFET SRT03N011L General Description Symbol The Sanrise SRT03N011L is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding e