FDMS0312S - аналоги, параметры транзистора - Справочник транзисторов

FDMS0312S даташит

..1. Size:270K fairchild semi
fdms0312s.pdf pdf_icon

January 2010 FDMS0312S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4.4 m Features General Description The FDMS0312S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.8 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest

6.1. Size:305K fairchild semi
fdms0312as.pdf pdf_icon

October 2014 FDMS0312AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 m Features General Description The FDMS0312AS has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest A

7.1. Size:454K fairchild semi
fdms0310s.pdf pdf_icon

January 2015 FDMS0310S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 m Features General Description The FDMS0310S has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest Advan

7.2. Size:337K fairchild semi
fdms0310as.pdf pdf_icon

August 2014 FDMS0310AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m Features General Description The FDMS0310AS has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest A

Другие MOSFET... STP15L01F , FDME410NZT , FDME510PZT , FDML7610S , STM9930A , FDMQ8203 , STM9926 , STM9435 , AON7410 , STM8820 , FDMS2502SDC , FDMS2504SDC , FDMS2506SDC , FDMS2508SDC , FDMS2510SDC , FDMS2572 , FDMS2672 .