Справочник MOSFET. SRT06N027HD

 

SRT06N027HD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SRT06N027HD
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 131 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 120 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 40 nC
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 480 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.003 Ohm
   Тип корпуса: PDFN5X6

 Аналог (замена) для SRT06N027HD

 

 

SRT06N027HD Datasheet (PDF)

 4.1. Size:1131K  sanrise-tech
srt06n027h.pdf

SRT06N027HD SRT06N027HD

Datasheet 2.7m, 60V, N-Channel Power MOSFET SRT06N027H General Description Symbol The Sanrise SRT06N027H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which req

 6.1. Size:1564K  sanrise-tech
srt06n022h.pdf

SRT06N027HD SRT06N027HD

Datasheet 2.2m, 60V, N-Channel Power MOSFET SRT06N022H General Description Symbol The Sanrise SRT06N022H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 7.1. Size:1356K  sanrise-tech
srt06n095l.pdf

SRT06N027HD SRT06N027HD

Datasheet 9.5m, 60V, N-Channel Power MOSFET SRT06N095L General Description Symbol Drain 5,6,7,8The Sanrise SRT06N095L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which r

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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