SRT06N027HT. Аналоги и основные параметры

Наименование производителя: SRT06N027HT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 131 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 153 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 480 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm

Тип корпуса: TO220

Аналог (замена) для SRT06N027HT

- подборⓘ MOSFET транзистора по параметрам

 

SRT06N027HT даташит

 4.1. Size:1131K  sanrise-tech
 srt06n027h.pdf pdf_icon

SRT06N027HT

Datasheet 2.7m , 60V, N-Channel Power MOSFET SRT06N027H General Description Symbol The Sanrise SRT06N027H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which req

 6.1. Size:1564K  sanrise-tech
 srt06n022h.pdf pdf_icon

SRT06N027HT

Datasheet 2.2m , 60V, N-Channel Power MOSFET SRT06N022H General Description Symbol The Sanrise SRT06N022H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 7.1. Size:1356K  sanrise-tech
 srt06n095l.pdf pdf_icon

SRT06N027HT

Datasheet 9.5m , 60V, N-Channel Power MOSFET SRT06N095L General Description Symbol Drain 5,6,7,8 The Sanrise SRT06N095L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which r

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