SRT08N025HT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SRT08N025HT
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 214 W
Предельно допустимое напряжение сток-исток |Uds|: 80 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 160 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 75 nC
Время нарастания (tr): 14 ns
Выходная емкость (Cd): 810 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0034 Ohm
Тип корпуса: TO220
Аналог (замена) для SRT08N025HT
SRT08N025HT Datasheet (PDF)
srt08n025hc56tr-g.pdf
Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S
srt08n025h.pdf
Datasheet 2.5m, 80V, N-Channel Power MOSFET SRT08N025H General Description Symbol The Sanrise SRT08N025H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior
srt08n055h.pdf
Datasheet 5.5m, 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio
srt08n015htltr-g.pdf
Datasheet1.1m, 80V, N-Channel Power MOSFET SRT08N015HTLTR-GGeneral Description SymbolThe Sanrise SRT08N015HTLTR-G is a lowvoltage power MOSFET, fabricated usingadvanced split gate trench technology. Theresulting device has extremely low on resistance,low gate charge and fast switching time, makingit especially suitable for applications whichrequire superior power density and
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