SRT10N040HC. Аналоги и основные параметры

Наименование производителя: SRT10N040HC

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 131.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 1300 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm

Тип корпуса: PDFN5X6

Аналог (замена) для SRT10N040HC

- подборⓘ MOSFET транзистора по параметрам

 

SRT10N040HC даташит

 ..1. Size:1302K  sanrise-tech
 srt10n040hc.pdf pdf_icon

SRT10N040HC

Datasheet 4.0m , 100V, N-Channel Power MOSFET SRT10N040HC General Description Symbol The Sanrise SRT10N040HC is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchron

 5.1. Size:1152K  sanrise-tech
 srt10n040l.pdf pdf_icon

SRT10N040HC

Datasheet 4.0m , 100V, N-Channel Power MOSFET SRT10N040L General Description Symbol The Sanrise SRT10N040L is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superi

 6.1. Size:1919K  sanrise-tech
 srt10n043h.pdf pdf_icon

SRT10N040HC

Datasheet 4.3m , 100V, N-Channel Power MOSFET SRT10N043H General Description Symbol The Sanrise SRT10N043H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou

 6.2. Size:728K  sanrise-tech
 srt10n047hc56tr-g.pdf pdf_icon

SRT10N040HC

Datasheet 4.7m , 100V, N-Channel Power MOSFET SRT10N047HC56TR-G General Description Symbol The Sanrise SRT10N047HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SRT08N025HT, SRT08N025HS, SRT08N025HC56TR-G, SRT08N055H, SRT08N100LM, SRT08N100LT, SRT08N100LD, SRT10N022HTLTR-G, RFP50N06, SRT10N040L, SRT10N043HD, SRT10N043HT, SRT10N043HS, SRT10N047HD56, SRT10N047HTC, SRT10N047HTF, SRT10N047HS2