SRT10N047HTF. Аналоги и основные параметры

Наименование производителя: SRT10N047HTF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 640 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0054 Ohm

Тип корпуса: TO220F

Аналог (замена) для SRT10N047HTF

- подборⓘ MOSFET транзистора по параметрам

 

SRT10N047HTF даташит

 4.1. Size:728K  sanrise-tech
 srt10n047hc56tr-g.pdf pdf_icon

SRT10N047HTF

Datasheet 4.7m , 100V, N-Channel Power MOSFET SRT10N047HC56TR-G General Description Symbol The Sanrise SRT10N047HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which

 4.2. Size:1764K  sanrise-tech
 srt10n047h.pdf pdf_icon

SRT10N047HTF

Datasheet 4.7m , 100V, N-Channel Power MOSFET SRT10N047H General Description Symbol The Sanrise SRT10N047H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power TO-263-2/TO-220C/TO-24

 5.1. Size:768K  sanrise-tech
 srt10n047ld56tr-g.pdf pdf_icon

SRT10N047HTF

Datasheet 4.7m , 100V, N-Channel Power MOSFET SRT10N047LD56TR-G General Description Symbol The Sanrise SRT10N047LD56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which

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