Datasheet 23m, 100V, N-Channel Power MOSFET SRT10N230H General Description Symbol The Sanrise SRT10N230H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

Datasheet 23m, 100V, N-Channel Power MOSFET SRT10N230L General Description Symbol Drain 5,6,7,8The Sanrise SRT10N230L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which r

Datasheet9m, 100V, N-Channel Power MOSFET SRT10N090LGeneral Description SymbolThe Sanrise SRT10N090L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous

Datasheet4.3m, 100V, N-Channel Power MOSFET SRT10N043HGeneral Description SymbolThe Sanrise SRT10N043H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou

Datasheet 16m, 100V, N-Channel Power MOSFET SRT10N160L General Description Symbol Drain 5,6,7,8The Sanrise SRT10N160L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which r

Datasheet 7m, 100V, N-Channel Power MOSFET SRT10N070L General Description Symbol Drain 5,6,7,8The Sanrise SRT10N070L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which re

Datasheet 10m, 100V, N-Channel Power MOSFET SRT10N120L General Description Symbol The Sanrise SRT10N120L uses advanced split Drain 5,6,7,8gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4time. This device is ideal for high frequency switching and synchronous rectification. The SRT10N120L break down voltage is 100V Source

Datasheet 4.0m, 100V, N-Channel Power MOSFET SRT10N040L General Description Symbol The Sanrise SRT10N040L is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superi

Datasheet7m, 100V, N-Channel Power MOSFET SRT10N070HGeneral Description SymbolThe Sanrise SRT10N070H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerTO-220C PDFN5*6density

Datasheet 4.7m, 100V, N-Channel Power MOSFET SRT10N047HC56TR-G General Description Symbol The Sanrise SRT10N047HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which

Datasheet1.9m, 100V, N-Channel Power MOSFET SRT10N022HTLTR-GGeneral Description SymbolThe Sanrise SRT10N022HTLTR-G is a low voltagepower MOSFET, fabricated using advanced split gatetrench technology. The resulting device has extremelylow on resistance, low Qg charge and fast switchingtime, making it especially suitable for applicationswhich require superior power density and s

Datasheet4.0m, 100V, N-Channel Power MOSFET SRT10N040HCGeneral Description SymbolThe Sanrise SRT10N040HC is a low voltagepower MOSFET, fabricated using advanced splitgate trench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchron

Datasheet 4.7m, 100V, N-Channel Power MOSFET SRT10N047LD56TR-G General Description Symbol The Sanrise SRT10N047LD56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which

Datasheet 13m, 100V, N-Channel Power MOSFET SRT10N130H General Description Symbol The Sanrise SRT10N130H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio

Datasheet4.7m, 100V, N-Channel Power MOSFET SRT10N047HGeneral Description SymbolThe Sanrise SRT10N047H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerTO-263-2/TO-220C/TO-24