SRT15N059HT. Аналоги и основные параметры
Наименование производителя: SRT15N059HT
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 265 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 2400 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0059 Ohm
Тип корпуса: TO247
Аналог (замена) для SRT15N059HT
- подборⓘ MOSFET транзистора по параметрам
SRT15N059HT даташит
srt15n059h.pdf
Datasheet 5.9m , 150V, N-Channel Power MOSFET SRT15N059H General Description Symbol The Sanrise SRT15N059H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou
srt15n050h.pdf
Datasheet 5.0m , 150V, N-Channel Power MOSFET SRT15N050H General Description Symbol The Sanrise SRT15N050H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou
srt15n090h.pdf
Datasheet 9.0m , 150V, N-Channel Power MOSFET SRT15N090H General Description Symbol The Sanrise SRT15N090H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior
srt15n075h.pdf
Datasheet 7.5m , 150V, N-Channel Power MOSFET SRT15N075H General Description Symbol The Sanrise SRT15N075H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou
Другие IGBT... SRT12N058HTC, SRT12N058HS2, SRT15N050HTC, SRT15N050HS2, SRT15N050HT, SRT15N050HTL, SRT15N059HTC, SRT15N059HS2, IRFP460, SRT15N059HTL, SRT15N075HTC, SRT15N075HS2, SRT15N075HD56, SRT15N090HTC, SRT15N090HS2, SRT15N090HD56, SRT15N110HD56
History: AP16N50W
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