SRT15N110HD56 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SRT15N110HD56
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 157 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 40 nC
Время нарастания (tr): 3 ns
Выходная емкость (Cd): 1030 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.011 Ohm
Тип корпуса: PDFN5X6
Аналог (замена) для SRT15N110HD56
SRT15N110HD56 Datasheet (PDF)
srt15n110h.pdf
Datasheet 11m, 150V, N-Channel Power MOSFET SRT15N110H General Description Symbol The Sanrise SRT15N110H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior
srt15n110l.pdf
Datasheet 11m, 150V, N-Channel Power MOSFET SRT15N110L General Description Symbol The Sanrise SRT15N110L is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio
srt15n050h.pdf
Datasheet5.0m, 150V, N-Channel Power MOSFET SRT15N050HGeneral Description SymbolThe Sanrise SRT15N050H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou
srt15n059h.pdf
Datasheet5.9m, 150V, N-Channel Power MOSFET SRT15N059HGeneral Description SymbolThe Sanrise SRT15N059H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou
srt15n090h.pdf
Datasheet 9.0m, 150V, N-Channel Power MOSFET SRT15N090H General Description Symbol The Sanrise SRT15N090H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior
srt15n075h.pdf
Datasheet7.5m, 150V, N-Channel Power MOSFET SRT15N075HGeneral Description SymbolThe Sanrise SRT15N075H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou
srt15n750l.pdf
Datasheet 75m, 150V, N-Channel Power MOSFET SRT15N750L General Description Symbol Drain 5,6,7,8The Sanrise SRT15N750L uses advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4time. This device is ideal for TV, Adapter applications and DC/DC converters. Source 1,2,3The SRT15N750L break down voltage is 150V
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