SRT15N110HD56. Аналоги и основные параметры

Наименование производителя: SRT15N110HD56

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 157 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3 ns

Cossⓘ - Выходная емкость: 1030 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm

Тип корпуса: PDFN5X6

Аналог (замена) для SRT15N110HD56

- подборⓘ MOSFET транзистора по параметрам

 

SRT15N110HD56 даташит

 4.1. Size:909K  sanrise-tech
 srt15n110h.pdf pdf_icon

SRT15N110HD56

Datasheet 11m , 150V, N-Channel Power MOSFET SRT15N110H General Description Symbol The Sanrise SRT15N110H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 5.1. Size:760K  sanrise-tech
 srt15n110l.pdf pdf_icon

SRT15N110HD56

Datasheet 11m , 150V, N-Channel Power MOSFET SRT15N110L General Description Symbol The Sanrise SRT15N110L is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio

 8.1. Size:1603K  sanrise-tech
 srt15n050h.pdf pdf_icon

SRT15N110HD56

Datasheet 5.0m , 150V, N-Channel Power MOSFET SRT15N050H General Description Symbol The Sanrise SRT15N050H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou

 8.2. Size:1690K  sanrise-tech
 srt15n059h.pdf pdf_icon

SRT15N110HD56

Datasheet 5.9m , 150V, N-Channel Power MOSFET SRT15N059H General Description Symbol The Sanrise SRT15N059H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou

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Другие IGBT... SRT15N059HT, SRT15N059HTL, SRT15N075HTC, SRT15N075HS2, SRT15N075HD56, SRT15N090HTC, SRT15N090HS2, SRT15N090HD56, AO3400, SRT15N110HTC, SRT15N110L, SRT15N750LD, SRT15N750LM, SRT15N750LD56, SRT20N090HTC, SRT20N090HS2, 2SK3995