Справочник MOSFET. SRT15N110HD56

 

SRT15N110HD56 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SRT15N110HD56
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 157 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 1030 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: PDFN5X6

 Аналог (замена) для SRT15N110HD56

 

 

SRT15N110HD56 Datasheet (PDF)

 4.1. Size:909K  sanrise-tech
srt15n110h.pdf

SRT15N110HD56
SRT15N110HD56

Datasheet 11m, 150V, N-Channel Power MOSFET SRT15N110H General Description Symbol The Sanrise SRT15N110H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 5.1. Size:760K  sanrise-tech
srt15n110l.pdf

SRT15N110HD56
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Datasheet 11m, 150V, N-Channel Power MOSFET SRT15N110L General Description Symbol The Sanrise SRT15N110L is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio

 8.1. Size:1603K  sanrise-tech
srt15n050h.pdf

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Datasheet5.0m, 150V, N-Channel Power MOSFET SRT15N050HGeneral Description SymbolThe Sanrise SRT15N050H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou

 8.2. Size:1690K  sanrise-tech
srt15n059h.pdf

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SRT15N110HD56

Datasheet5.9m, 150V, N-Channel Power MOSFET SRT15N059HGeneral Description SymbolThe Sanrise SRT15N059H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou

 8.3. Size:1338K  sanrise-tech
srt15n090h.pdf

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SRT15N110HD56

Datasheet 9.0m, 150V, N-Channel Power MOSFET SRT15N090H General Description Symbol The Sanrise SRT15N090H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 8.4. Size:1655K  sanrise-tech
srt15n075h.pdf

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SRT15N110HD56

Datasheet7.5m, 150V, N-Channel Power MOSFET SRT15N075HGeneral Description SymbolThe Sanrise SRT15N075H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou

 8.5. Size:1176K  sanrise-tech
srt15n750l.pdf

SRT15N110HD56
SRT15N110HD56

Datasheet 75m, 150V, N-Channel Power MOSFET SRT15N750L General Description Symbol Drain 5,6,7,8The Sanrise SRT15N750L uses advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4time. This device is ideal for TV, Adapter applications and DC/DC converters. Source 1,2,3The SRT15N750L break down voltage is 150V

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History: IRC530A

 

 
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