Справочник MOSFET. VS3603GPMT

 

VS3603GPMT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VS3603GPMT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 89 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 200 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 83 ns
   Cossⓘ - Выходная емкость: 5170 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0021 Ohm
   Тип корпуса: PDFN5X6

 Аналог (замена) для VS3603GPMT

 

 

VS3603GPMT Datasheet (PDF)

 ..1. Size:1143K  cn vgsemi
 vs3603gpmt.pdf

VS3603GPMT VS3603GPMT

VS3603GPMT30V/200A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.1 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.6 m Very low on-resistanceI D(Silicon Limited) 205 A VitoMOS TechnologyI D(Package Limited) 200 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche testPart ID Package Type Marking PackingVS3603G

 9.1. Size:1048K  cn vgsemi
 vs3604dt.pdf

VS3603GPMT VS3603GPMT

VS3604DT30V/300A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 1.6 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 300 A Ultra-Low Gate ImpedanceTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3604DT TO-

 9.2. Size:875K  cn vgsemi
 vs3602gpmt.pdf

VS3603GPMT VS3603GPMT

VS3602GPMT30V/200A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 0.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 0.9 m Ultra low on-resistanceI D(Silicon Limited) 440 A VitoMOS TechnologyI D(Package Limited) 200 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche tested, 100% Rg testedPart ID Package Type Marki

 9.3. Size:1026K  cn vgsemi
 vs3606ad.pdf

VS3603GPMT VS3603GPMT

VS3606AD30V/110A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 3.5 m Enhancement modeI D 110 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingTO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3

 9.4. Size:1190K  cn vgsemi
 vs3605abt.pdf

VS3603GPMT VS3603GPMT

VS3605ABT30V/145A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 2.2 m Low RDS(on) to minimize conduction lossesI D(Silicon Limited) 145 A 100% Avalanche Tested,100% Rg TestedTDFN3333Part ID Package Type Marking PackingVS3605ABT TDFN3333 3605AB 5000PCS/ReelMaximum ratings, at TA =25C

 9.5. Size:1076K  cn vgsemi
 vs3606ap.pdf

VS3603GPMT VS3603GPMT

VS3606AP30V/106A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.0 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 2.9 m Enhancement modeI D 106 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantTape and reelPart ID Package Type Mark

 9.6. Size:1051K  cn vgsemi
 vs3604at.pdf

VS3603GPMT VS3603GPMT

VS3604AT30V/180A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.1 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 2.8 m Enhancement modeI D 180 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3604AT TO-220AB 3

 9.7. Size:1017K  cn vgsemi
 vs3606ae.pdf

VS3603GPMT VS3603GPMT

VS3606AE30V/92A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 3.4 m Very Low on-resistanceI D 92 A Fast Switching 100% Avalanche testPDFN3333Part ID Package Type Marking PackingVS3606AE PDFN3333 3606AE 5000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol

 9.8. Size:1033K  cn vgsemi
 vs3604dm.pdf

VS3603GPMT VS3603GPMT

VS3604DM30V/300A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 1.7 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 300 A Ultra-Low Gate ImpedanceTO-263 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3604DM TO-26

 9.9. Size:1035K  cn vgsemi
 vs3606atd.pdf

VS3603GPMT VS3603GPMT

VS3606ATD30V/140A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 4 m Enhancement modeI D 140 A Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche TestedTO-263 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3606ATD TO-263 3606ATD

 9.10. Size:1047K  cn vgsemi
 vs3606at.pdf

VS3603GPMT VS3603GPMT

VS3606AT30V/140A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 4 m Enhancement modeI D 140 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3606AT TO-220AB 3606AT

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