VS3604DM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: VS3604DM
Маркировка: 3604DM
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 214 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.3 V
Максимально допустимый постоянный ток стока |Id|: 300 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 142 nC
Время нарастания (tr): 19 ns
Выходная емкость (Cd): 1575 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0018 Ohm
Тип корпуса: TO263
VS3604DM Datasheet (PDF)
vs3604dm.pdf
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VS3604DM30V/300A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 1.7 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 300 A Ultra-Low Gate ImpedanceTO-263 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3604DM TO-26
vs3604dt.pdf
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VS3604DT30V/300A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 1.6 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 300 A Ultra-Low Gate ImpedanceTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3604DT TO-
vs3604at.pdf
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VS3604AT30V/180A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.1 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 2.8 m Enhancement modeI D 180 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3604AT TO-220AB 3
vs3602gpmt.pdf
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VS3602GPMT30V/200A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 0.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 0.9 m Ultra low on-resistanceI D(Silicon Limited) 440 A VitoMOS TechnologyI D(Package Limited) 200 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche tested, 100% Rg testedPart ID Package Type Marki
vs3606ad.pdf
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VS3606AD30V/110A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 3.5 m Enhancement modeI D 110 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingTO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3
vs3605abt.pdf
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VS3605ABT30V/145A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 2.2 m Low RDS(on) to minimize conduction lossesI D(Silicon Limited) 145 A 100% Avalanche Tested,100% Rg TestedTDFN3333Part ID Package Type Marking PackingVS3605ABT TDFN3333 3605AB 5000PCS/ReelMaximum ratings, at TA =25C
vs3606ap.pdf
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VS3606AP30V/106A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.0 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 2.9 m Enhancement modeI D 106 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantTape and reelPart ID Package Type Mark
vs3606ae.pdf
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VS3606AE30V/92A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 3.4 m Very Low on-resistanceI D 92 A Fast Switching 100% Avalanche testPDFN3333Part ID Package Type Marking PackingVS3606AE PDFN3333 3606AE 5000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol
vs3603gpmt.pdf
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VS3603GPMT30V/200A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.1 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.6 m Very low on-resistanceI D(Silicon Limited) 205 A VitoMOS TechnologyI D(Package Limited) 200 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche testPart ID Package Type Marking PackingVS3603G
vs3606atd.pdf
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VS3606ATD30V/140A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 4 m Enhancement modeI D 140 A Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche TestedTO-263 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3606ATD TO-263 3606ATD
vs3606at.pdf
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VS3606AT30V/140A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 4 m Enhancement modeI D 140 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3606AT TO-220AB 3606AT
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![VS3604DM](https://alltransistors.com/images/us.png)
![VS3604DM](https://alltransistors.com/images/es.png)
![VS3604DM](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C