FDMS3600S - описание и поиск аналогов

October 2010 FDMS3600S Dual N-Channel PowerTrench MOSFET N-Channel 25 V, 30 A, 5.6 m N-Channel 25 V, 40 A, 1.6 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchron

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

April 2011 FDMS3600AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 m at VGS = 4.5

December 2012 FDMS3606S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5

March 2011 FDMS3602S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 m at VGS = 4.5

January 2015 FDMS3604S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description This device includes two specialized N-Channel MOSFETs in a Q1 N-Channel dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V

March 2011 FDMS3604AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V,

April 2011 FDMS3606AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V,

March 2011 FDMS3602AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 m at VGS = 4.5