VS3615GE - описание и поиск аналогов

 ..1. Size:976K  cn vgsemi
 vs3615ge.pdf 

VS3615GE 30V/40A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 3.6 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 5.6 m Very low on-resistance I D(Silicon Limited) 67 A VitoMOS Technology I D(Package Limited) 40 A Fast Switching and High efficiency PDFN3333 100% Avalanche Tested Part ID Package Type Marking Packing VS3615GE

 7.1. Size:1052K  cn vgsemi
 vs3615ga.pdf 

VS3615GA 30V/13A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 3.6 m Enhancement mode R DS(on),TYP@ VGS=4.5V 5.6 m Very low on-resistance I D(Silicon Limited) 13 A VitoMOS Technology DFN2x2x0.75-6L Fast Switching and High efficiency Part ID Package Type Marking Packing VS3615GA DFN2x2x0.75-6L 3615GA 3000pcs/Reel Maximum rating

 9.1. Size:609K  cn vanguard
 vs3618ae.pdf 

VS3618AE 30V/50A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 6 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 50 A Very low on-resistance RDS(on) @ VGS=4.5 V PDFN3333 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Packag

 9.2. Size:1009K  cn vanguard
 vs3610ae.pdf 

VS3610AE 30V/64A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 4 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 5.7 m Enhancement mode I D 64 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Pack

 9.3. Size:2538K  cn vanguard
 vs3618be.pdf 

VS3618BE 30V/30A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 5.2 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 7.8 m Fast Switching and High efficiency I D(Silicon Limited) 50 A 100% Avalanche Tested I D(Package Limited) 30 A PDFN3333 Part ID Package Type Marking Packing VS3618BE PDFN3333 3618BE 5000PCS/Reel Maximum ratings, at TA =25

 9.4. Size:928K  cn vgsemi
 vs3618ae.pdf 

VS3618AE 30V/32A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 6.4 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 8.8 m Fast Switching and High efficiency I D(Silicon Limited) 50 A 100% Avalanche test I D(Package Limited) 32 A PDFN3333 Part ID Package Type Marking Packing VS3618AE PDFN3333 3618AE 5000PCS/Reel Maximum ratings, at TA =25 C,

 9.5. Size:1032K  cn vgsemi
 vs3618ad.pdf 

VS3618AD 30V/70A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 5.8 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 70 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3618A

 9.6. Size:1043K  cn vgsemi
 vs3614ae.pdf 

VS3614AE 30V/58A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 5.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 8 m Very low on-resistance RDS(on) @ VGS=4.5 V I D 58 A Fast Switching and High efficiency PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3614AE PDFN3333 3614AE

 9.7. Size:897K  cn vgsemi
 vs3614gp.pdf 

VS3614GP 30V/31A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 3.7 m Enhancement mode R DS(on),TYP@ VGS=4.5V 6.2 m Very low on-resistance I D(Silicon Limited) 60 A VitoMOS Technology I D(Package Limited) 31 A Fast Switching and High efficiency PDFN5x6 100% Avalanche Tested,100% Rg Tested Part ID Package Type Marking Packin

 9.8. Size:983K  cn vgsemi
 vs3610ae.pdf 

VS3610AE 30V/64A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 4 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 5.7 m Enhancement mode I D 64 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS361

 9.9. Size:999K  cn vgsemi
 vs3618as.pdf 

VS3618AS 30V/16A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 6.6 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9.6 m Enhancement mode I D 16 A Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test SOP8 Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3618AS SOP8 3618AS 3000PCS/Ree

 9.10. Size:1141K  cn vgsemi
 vs3618be.pdf 

VS3618BE 30V/58A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 5.2 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 7.8 m Fast Switching and High efficiency I D(Silicon Limited) 58 A 100% Avalanche Tested PDFN3333 Part ID Package Type Marking Packing VS3618BE PDFN3333 3618BE 5000PCS/Reel Maximum ratings, at TA =25 C, unless otherwise specifi

 9.11. Size:945K  cn vgsemi
 vs3610ad.pdf 

VS3610AD 30V/85A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 4.3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 6 m Enhancement mode I D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-252 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3610A

 9.12. Size:990K  cn vgsemi
 vs3612gp.pdf 

VS3612GP 30V/45A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 3.6 m Enhancement mode R DS(on),TYP@ VGS=4.5V 5.3 m Very low on-resistance I D(Silicon Limited) 72 A VitoMOS Technology I D(Package Limited) 45 A Fast Switching and High efficiency PDFN5x6 100% Avalanche Tested Part ID Package Type Marking Packing VS3612GP PDF

 9.13. Size:947K  cn vgsemi
 vs3610ai.pdf 

VS3610AI 30V/85A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 4.2 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 6 m Enhancement mode I D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiency TO-251SL 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Ma

 9.14. Size:784K  cn vgsemi
 vs3614ge.pdf 

VS3614GE 30V/31A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 3.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 5.8 m Low RDS(on) to minimize conduction losses I D(Wire bond Limited) 31 A VitoMOS Technolog 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VS3614GE PDFN3333 3614GE 5000PCS/Reel Ma

 9.15. Size:1161K  cn vgsemi
 vs3618ah.pdf 

VS3618AH 30V/8A N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 9.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 13 m Fast Switching I D 8 A High Effective SOT23-6L Part ID Package Type Marking Packing VS3618AH SOT23-6L VS02 3000pcs/reel Maximum ratings, at TA =25 C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-

 9.16. Size:1020K  cn vgsemi
 vs3610ap.pdf 

VS3610AP 30V/70A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 3.7 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 5.4 m Enhancement mode I D 70 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS36

 9.17. Size:1043K  cn vgsemi
 vs3618ap.pdf 

VS3618AP 30V/54A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 5.4 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 8.4 m Enhancement mode I D 54 A Very low on-resistance RDS(on) @ VGS=4.5 V PDFN5x6 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS36

 9.18. Size:1012K  cn vgsemi
 vs3614ad.pdf 

VS3614AD 30V/75A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 7.5 m Low on-resistance RDS(on) @ VGS=4.5 V I D 75 A Fast Switching and High efficiency TO-252 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3614AD TO-252 3614AD 2500pcs/

 9.19. Size:827K  cn vgsemi
 vs3610gpmt.pdf 

VS3610GPMT 30V/78A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 2.5 m Enhancement mode R DS(on),TYP@ VGS=4.5V 3.7 m Low RDS(on) to minimize conduction losses I D 78 A VitoMOS Technology 100% Avalanche Tested,100% Rg Tested PDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part ID Package Type Ma