STM8455 - Даташиты. Аналоги. Основные параметры

S T M8455S amHop Microelectronics C orp. Aug.16,2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)(N-C hannel) (PP R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel)V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max29 @ VG S = 10V 42 @ V G S = -10V-40V -5A40V 6A40 @ V G S = 4.5V 62 @ V G S = -4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S

STM8456aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID33 @ VGS=10V 45 @ VGS=-10V40V 6.2A -40V -5.3A45 @ VGS=4.5V 70 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi

STM8458aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID32 @ VGS=10V 48 @ VGS=-10V40V 6.3A -40V -5.1A42 @ VGS=4.5V 68 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi

GreenProductSTM8457SamHop Microelectronics Corp.Dec.21,2009 Ver1.1Dual Enhancement Mode Field Effect Transistor ( N and P Channel)(N-Channel) (P-Channel)PRODUCT SUMMARY PRODUCT SUMMARYVDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max26 @ VGS = 10V 42 @ VGS = -10V-40V -5A40V 6A33 @ VGS = 4.5V 62 @ VGS = -4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4S1 G1 S2 G2