August 2011FDMS3615SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.8 m at VGS = 10 V, ID = 16 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.3 m at VGS =

December 2011FDMS3610SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

June 2013FDMS36101L_F085N-Channel Power Trench MOSFET100V, 38A, 26m Features Typ rDS(on) = 18m at VGS = 10V, ID = 20A Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V Sy

January 2012FDMS3686SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V

April 2011FDMS3600ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 m at VGS = 4.5

February 2007FDMS3672tmN-Channel UltraFET Trench MOSFET 100V, 22A, 23mFeatures General Description Max rDS(on) = 23m at VGS = 10V, ID = 7.4AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 29m at VGS = 6V, ID = 6.6AOptimized for rDS(on), low ESR, low total and Miller gate charge, Typ Qg = 31n

February 2015FDMS3660SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5

December 2012FDMS3668SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5

December 2011FDMS3624SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

December 2012FDMS3606SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5

December 2011FDMS3622SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

March 2011FDMS3602SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 m at VGS = 4.5

December 2011FDMS3626SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

January 2015FDMS3664SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V

October 2010FDMS3600SDual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 m N-Channel: 25 V, 40 A, 1.6 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchron

May 2009FDMS3662tmN-Channel Power Trench MOSFET 100V, 49A, 14.8mFeatures General Description Max rDS(on) = 14.8m at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Advanced Package and Silicon combination for low rDS(on)been especially tailored to minimize the on-state resistance and

July 2012FDMS3620SPowerTrench PowerStage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 4.7 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and routing

January 2013FDMS3669SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 10 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 14.5 m at VGS = 4.

January 2015FDMS3604SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionThis device includes two specialized N-Channel MOSFETs in a Q1: N-Channeldual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V

July 2013FDMS3660ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V,

March 2011FDMS3604ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V,

April 2011FDMS3606ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V,

March 2011FDMS3602ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 m at VGS = 4.5

FDMS3660SPowerTrench) Power StageAsymmetric Dual N-Channel MOSFETDescriptionThis device includes two specialized N-Channel MOSFETs in awww.onsemi.comdual PQFN package. The switch node has been internally connected toenable easy placement and routing of synchronous buck converters.The control MOSFET (Q1) and synchronous SyncFET (Q2) havebeen designed to provide optimal power ef

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur