VS4802GKM - параметры транзистора MOSFET, его аналоги, datasheet

VS4802GKM Datasheet (PDF)

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VS4802GKM40V/240A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 0.92 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.35 m Ultra low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 240 A VitoMOS TechnologyTOLL 100% Avalanche Tested,100% Rg Tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses

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VS4802GPMT40V/200A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 0.7 m Enhancement modeR DS(on),TYP@ VGS=4.5V 1.1 m Ultra low on-resistanceI D(Silicon Limited) 215 A VitoMOS TechnologyI D(Package Limited) 200 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking

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VS4802GMM40V/135A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.6 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 135 A VitoMOS TechnologyTO-263 100% Avalanche Tested,100% Rg Tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart I

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VS4802GPHT40V/200A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 0.7 m Enhancement modeI D(Silicon Limited) 215 A Ultra low on-resistanceI D(Package Limited) 200 A VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking Pa

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