VSE003N04MSC-G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: VSE003N04MSC-G
Маркировка: 03N04M
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 41 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 56 nC
trⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 840 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
Тип корпуса: PDFN3333
Аналог (замена) для VSE003N04MSC-G
VSE003N04MSC-G Datasheet (PDF)
vse003n04msc-g.pdf
VSE003N04MSC-G40V/100A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),Typ@ VGS=10 V 2.3 m Enhancement modeR DS(on),Typ@ VGS=4.5 V 3.4 m Very Low On-ResistanceI D 100 A VitoMOS Technology Fast Switching and High efficiency PDFN3333 100% Avalanche testPart ID Package Type Marking PackingVSE003N04MSC-G PDFN3333 03N04M 5000PCS/ReelMax
vse003n04ms-g.pdf
VSE003N04MS-G40V/40A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 2.8 m Low RDS(on) to minimize conduction lossesI D(Package Limited) 40 A VitoMOS Technology Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses 100% Avalanche Tested,100% Rg Tested PDFN3333Part
vse009ne6ms-g.pdf
VSE009NE6MS-G60V/50A N-Channel Advanced Power MOSFETV DS 60 VFeaturesR DS(on),TYP@ VGS=10V 7 m Enhancement modeR DS(on),TYP@ VGS=4.5V 12 m VitoMOS TechnologyI D 50 A Fast Switching and High efficiencyPDFN3333 100% Avalanche TestedPart ID Package Type Marking PackingVSE009NE6MS-G PDFN3333 009NE6M 5000pcs/ReelMaximum ratings, at T A=25 C, unle
vse008ne2ls.pdf
VSE008NE2LS25V/55A N-Channel Advanced Power MOSFETV DS 25 VFeaturesR DS(on),TYP@ VGS=10 V 5.8 m N-Channel3.3V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6.6 m Low RDS(on) and High EfficiencyI D 55 A Fast Switching Enhancement modePDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSE008NE2
vse004n04ms.pdf
VSE004N04MS40V/48A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 5.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVSE004N04MS PDFN3333 004N04M 5000PCS/ReelMaximum ratings, at TA =25
vse002n03ms-g.pdf
VSE002N03MS-G30V/155A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 1.4 m Enhancement modeR DS(on),TYP@ VGS=4.5V 2.2 m Low on-resistance RDS(on) @ VGS=4.5 VI D(Silicon Limited) 155 A VitoMOS Technology Fast Switching and High efficiencyPDFN3333 ESD Protection HBM 1500V Pb-free lead plating; RoHS compliant; Halogen
vse006n03msc-g.pdf
VSE006N03MSC-G30V/36A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 7.3 m Very low on-resistanceI D(Silicon Limited) 48 A VitoMOS TechnologyI D(Package Limited) 36 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVSE006N03MSC-G PDFN3333 006N
vse005n03ms.pdf
VSE005N03MS30V/78A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 4.2 m Enhancement modeI D 78 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Packing
vse008n03ls.pdf
VSE008N03LS30V/42A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 10 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 42 A Fast Switching and High efficiency 100% Avalanche testPDFN3333 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSE008N03LS PDFN3333 0
vse007n04ms-g.pdf
VSE007N04MS-G40V/75A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 3.2 m Enhancement modeR DS(on),TYP@ VGS=4.5V 4.9 m Low on-resistance RDS(on) @ VGS=4.5 VI D 75 A VitoMOS TechnologyPDFN3333 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant; Halogen freePart ID Package Type Marking PackingVSE007
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918