FDMS4435BZ - описание и поиск аналогов

March 2011 FDMS4435BZ P-Channel PowerTrench MOSFET -30 V, -18 A, 20 m Features General Description Max rDS(on) = 20 m at VGS = -10 V, ID = -9.0 A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.5 A Semiconductor s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This Exte

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET - Power, Single N-Channel, PQFN8 120 V, 4.0 mW, 118 A FDMS4D0N12C Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DDS ID MAX RDS(on) MAX Low QG and Capacitance to Minimize Driver Losses 67 A 4.0 m @ 10 V These are Pb-free, Halogen Free / BFR Free and are RoHS 120 V Compliant 33 A 8.0 m @

FDMS4D5N08LC MOSFET, N-Channel Shielded Gate, POWERTRENCH) 80 V, 116 A, 4.2 mW www.onsemi.com General Description This N-Channel MV MOSFET is produced using ELECTRICAL CONNECTION ON Semiconductor s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been G D 5 4 optimized to minimise on-state resistance and yet maintain superior switching