March 2011FDMS4435BZP-Channel PowerTrench MOSFET -30 V, -18 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = -10 V, ID = -9.0 AThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.5 A Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This Exte

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET - Power, SingleN-Channel, PQFN8120 V, 4.0 mW, 118 AFDMS4D0N12CFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DDS ID MAX RDS(on) MAX Low QG and Capacitance to Minimize Driver Losses67 A 4.0 m @ 10 V These are Pb-free, Halogen Free / BFR Free and are RoHS120 VCompliant33 A 8.0 m @

FDMS4D5N08LCMOSFET, N-ChannelShielded Gate,POWERTRENCH)80 V, 116 A, 4.2 mWwww.onsemi.comGeneral DescriptionThis N-Channel MV MOSFET is produced usingELECTRICAL CONNECTIONON Semiconductors advanced POWERTRENCH process thatincorporates Shielded Gate technology. This process has beenGD 5 4optimized to minimise on-state resistance and yet maintain superiorswitching