Справочник MOSFET. VSE005N03MS

 

VSE005N03MS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VSE005N03MS
   Маркировка: 005N03M
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 36.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 78 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 54 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 380 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: PDFN3333

 Аналог (замена) для VSE005N03MS

 

 

VSE005N03MS Datasheet (PDF)

 ..1. Size:1239K  cn vgsemi
 vse005n03ms.pdf

VSE005N03MS VSE005N03MS

VSE005N03MS30V/78A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 4.2 m Enhancement modeI D 78 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Packing

 9.1. Size:1886K  cn vanguard
 vse009ne6ms-g.pdf

VSE005N03MS VSE005N03MS

VSE009NE6MS-G60V/50A N-Channel Advanced Power MOSFETV DS 60 VFeaturesR DS(on),TYP@ VGS=10V 7 m Enhancement modeR DS(on),TYP@ VGS=4.5V 12 m VitoMOS TechnologyI D 50 A Fast Switching and High efficiencyPDFN3333 100% Avalanche TestedPart ID Package Type Marking PackingVSE009NE6MS-G PDFN3333 009NE6M 5000pcs/ReelMaximum ratings, at T A=25 C, unle

 9.2. Size:984K  cn vgsemi
 vse008ne2ls.pdf

VSE005N03MS VSE005N03MS

VSE008NE2LS25V/55A N-Channel Advanced Power MOSFETV DS 25 VFeaturesR DS(on),TYP@ VGS=10 V 5.8 m N-Channel3.3V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6.6 m Low RDS(on) and High EfficiencyI D 55 A Fast Switching Enhancement modePDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSE008NE2

 9.3. Size:966K  cn vgsemi
 vse004n04ms.pdf

VSE005N03MS VSE005N03MS

VSE004N04MS40V/48A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 5.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVSE004N04MS PDFN3333 004N04M 5000PCS/ReelMaximum ratings, at TA =25

 9.4. Size:1250K  cn vgsemi
 vse002n03ms-g.pdf

VSE005N03MS VSE005N03MS

VSE002N03MS-G30V/155A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 1.4 m Enhancement modeR DS(on),TYP@ VGS=4.5V 2.2 m Low on-resistance RDS(on) @ VGS=4.5 VI D(Silicon Limited) 155 A VitoMOS Technology Fast Switching and High efficiencyPDFN3333 ESD Protection HBM 1500V Pb-free lead plating; RoHS compliant; Halogen

 9.5. Size:1062K  cn vgsemi
 vse006n03msc-g.pdf

VSE005N03MS VSE005N03MS

VSE006N03MSC-G30V/36A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 7.3 m Very low on-resistanceI D(Silicon Limited) 48 A VitoMOS TechnologyI D(Package Limited) 36 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVSE006N03MSC-G PDFN3333 006N

 9.6. Size:926K  cn vgsemi
 vse003n04ms-g.pdf

VSE005N03MS VSE005N03MS

VSE003N04MS-G40V/40A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 2.8 m Low RDS(on) to minimize conduction lossesI D(Package Limited) 40 A VitoMOS Technology Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses 100% Avalanche Tested,100% Rg Tested PDFN3333Part

 9.7. Size:1246K  cn vgsemi
 vse003n04msc-g.pdf

VSE005N03MS VSE005N03MS

VSE003N04MSC-G40V/100A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),Typ@ VGS=10 V 2.3 m Enhancement modeR DS(on),Typ@ VGS=4.5 V 3.4 m Very Low On-ResistanceI D 100 A VitoMOS Technology Fast Switching and High efficiency PDFN3333 100% Avalanche testPart ID Package Type Marking PackingVSE003N04MSC-G PDFN3333 03N04M 5000PCS/ReelMax

 9.8. Size:964K  cn vgsemi
 vse008n03ls.pdf

VSE005N03MS VSE005N03MS

VSE008N03LS30V/42A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 10 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 42 A Fast Switching and High efficiency 100% Avalanche testPDFN3333 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSE008N03LS PDFN3333 0

 9.9. Size:1066K  cn vgsemi
 vse007n04ms-g.pdf

VSE005N03MS VSE005N03MS

VSE007N04MS-G40V/75A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 3.2 m Enhancement modeR DS(on),TYP@ VGS=4.5V 4.9 m Low on-resistance RDS(on) @ VGS=4.5 VI D 75 A VitoMOS TechnologyPDFN3333 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant; Halogen freePart ID Package Type Marking PackingVSE007

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