ME2306BS - описание и поиск аналогов

 ..1. Size:1599K  matsuki electric
 me2306bs me2306bs-g.pdf 

ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON) 38m @VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON) 43m @VGS=4.5V technology. This high density process is especially tailored to RDS(ON) 62m @VGS=2.5V minimize on-state resistance. These

 8.1. Size:879K  matsuki electric
 me2306n me2306n-g.pdf 

ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON) 37m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 49m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) mi

 8.2. Size:1294K  matsuki electric
 me2306s me2306s-g.pdf 

ME2306S/ME2306S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON) 37m @ VGS =10V The ME2306S is the N-Channel logic enhancement mode power RDS(ON) 49m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailor

 8.3. Size:730K  matsuki electric
 me2306an me2306an-g.pdf 

Preliminary-ME2306AN/ME2306AN-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2306AN is the N-Channel logic enhancement mode power RDS(ON) 37m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 40m @VGS=4.5V technology. This high density process is especially tailored to RDS(ON) 53m @VGS=2.5V minimize on-state r

 8.4. Size:1115K  matsuki electric
 me2306ds me2306ds-g.pdf 

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME2306DS is the N-Channel logic enhancement mode power RDS(ON) 31m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 52m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state

 8.5. Size:1039K  matsuki electric
 me2306as me2306as-g.pdf 

ME2306AS/ME2306AS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306AS is the N-Channel logic enhancement mode power RDS(ON) 34.5m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 38m @VGS=4.5V technology.This high density process is especially tailored to RDS(ON) 50m @VGS=2.5V minimize on-state resistance.These

 8.6. Size:1457K  matsuki electric
 me2306d me2306d-g.pdf 

ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME2306D is the N-Channel logic enhancement mode power RDS(ON) 31m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 52m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state res

 8.7. Size:1045K  matsuki electric
 me2306 me2306-g.pdf 

ME2306/ME2306-G N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 37m @VGS=10V The ME2306 is the N-Channel logic enhancement mode power field RDS(ON) 49m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to

 8.8. Size:1203K  matsuki electric
 me2306a me2306a-g.pdf 

ME2306A/ME2306A-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306A is the N-Channel logic enhancement mode power field RDS(ON) 34.5m @VGS=10V effect transistors, using high cell density, DMOS trench technology. RDS(ON) 38m @VGS=4.5V This high density process is especially tailored to minimize on-state RDS(ON) 50m @VGS=2.5V resistance. Su