ME2308D-G - параметры транзистора MOSFET, его аналоги, datasheet

ME2308D-G Datasheet (PDF)

..1. Size:921K matsuki electric
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ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308D is the N-Channel logic enhancement mode power RDS(ON)60m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)70m@VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)100m@VGS=2.5V minimize

7.1. Size:830K matsuki electric
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ME2308DN-G N-Channel 20V (D-S) MOSFET ,ESD ProtectionGENERAL DESCRIPTION FEATURES The ME2308DN-G is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5Vtrench technology. This high density process is especially tailored to RDS(ON) 0.65 @VGS=1.8Vmini

8.1. Size:1540K matsuki electric
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ME2308S/ME2308S-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2308S is the N-Channel logic enhancement mode power RDS(ON) 100m@VGS=10Vfield effect transistors are produced using high cell density, DMOS RDS(ON) 130m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

8.2. Size:850K cn vbsemi
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ME2308Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .