ME2320DS - Даташиты. Аналоги. Основные параметры

Preliminary-ME2320DS/ME2320DS-G N-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME2320DS is the N-Channel logic enhancement mode power RDS(ON)=21m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)=25 m@VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)=33 m@VGS=1.8V

ME2320D/ME2320D-G N-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME2320D is the N-Channel logic enhancement mode power RDS(ON)=21m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)=25 m@VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)=40 m@VGS=1.8V minimize on-st

ME2320D2-G/ME2320D2-G N-Channel 20V (D-S) MOSFET , ESD ProtectionGENERAL DESCRIPTION FEATURES The ME2320D2 is the N-Channel logic enhancement mode power RDS(ON)=21m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RDS(ON)=25 m@VGS=2.5Vtrench technology. This high density process is especially tailored to RDS(ON)=40 m@VGS=1.8Vminimize on-s

ME2323D/ME2323D-G P-Channel 20-V (D-S) MOSFETESD Protection GENERAL DESCRIPTION FEATURES The ME2323D(-G) is the P-Channel logic enhancement mode power RDS(ON) 50m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 65m@VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON) 75m@VGS=-1.8

ME2328/ME2328-G N - Channel 105-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)270m@VGS=10V The ME2328 is the N-Channel logic enhancement mode power field RDS(ON)340m@VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especiall

ME2325S/ME2325S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)50m@VGS=-10V The ME2325S is the P-Channel logic enhancement mode power field RDS(ON)76m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially

ME2324D/ME2324D-G N-Channel 25V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2324D is the N-Channel logic enhancement mode power RDS(ON)400m@VGS=4.5V field effect transistors are produced using high cell density , DMOS RDS(ON)450m@VGS=2.7V trench technology. This high density process is especially tailored to ESD Protection HBM >1KV minimize

ME2326A/ME2326A-G N - Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5.5@VGS=10V The ME2326A is the N-Channel logic enhancement mode power field RDS(ON)5.5@VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especial

ME2325/ME2325-G P-Channel 30V (D-S) MOSFETMOSFETGENERAL DESCRIPTION FEATURES The ME2325 is the P-Channel logic enhancement mode power field RDS(ON)50m@VGS=-10Veffect transistors are produced using high cell density, DMOS trench RDS(ON)76m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low

ME2323Dwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS