ME7642 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ME7642
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20.8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 19.3 ns
Cossⓘ - Выходная емкость: 328 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: POWERDFN5X6
ME7642 Datasheet (PDF)
me7642 me7642-g.pdf
ME7642/ME7642-G N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7642-G is the N-Channel logic enhancement mode power RDS(ON)4m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)5.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme
me7644 me7644-g.pdf
ME7644/ME7644-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES The ME7644 is the N-Channel logic enhancement mode power field RDS(ON)0.96m@VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)1.98m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremel
me7640 me7640-g.pdf
ME7640/ME7640-G N-Channel 40V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7640 is the N-Channel logic enhancement mode power field RDS(ON) 1.35 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 2 m @VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RD
me7648 me7648-g.pdf
Preliminary-ME7648/ME7648-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME7648 is the N-Channel logic enhancement mode power field RDS(ON) 2.7 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS (ON) 8.8 m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design f
me7648s me7648s-g.pdf
ME7648S/ME7648S-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7648S is the N-Channel logic enhancement mode power RDS(ON) 3.1m @VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS (ON) 5.5 m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extrem
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918