Справочник MOSFET. ME7642-G

 

ME7642-G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ME7642-G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 40.5 nC
   trⓘ - Время нарастания: 19.3 ns
   Cossⓘ - Выходная емкость: 328 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: POWERDFN5X6

 Аналог (замена) для ME7642-G

 

 

ME7642-G Datasheet (PDF)

 ..1. Size:1008K  matsuki electric
 me7642 me7642-g.pdf

ME7642-G ME7642-G

ME7642/ME7642-G N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7642-G is the N-Channel logic enhancement mode power RDS(ON)4m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)5.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme

 9.1. Size:2202K  matsuki electric
 me7644 me7644-g.pdf

ME7642-G ME7642-G

ME7644/ME7644-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES The ME7644 is the N-Channel logic enhancement mode power field RDS(ON)0.96m@VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)1.98m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremel

 9.2. Size:1062K  matsuki electric
 me7640 me7640-g.pdf

ME7642-G ME7642-G

ME7640/ME7640-G N-Channel 40V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7640 is the N-Channel logic enhancement mode power field RDS(ON) 1.35 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 2 m @VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RD

 9.3. Size:1657K  matsuki electric
 me7648 me7648-g.pdf

ME7642-G ME7642-G

Preliminary-ME7648/ME7648-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME7648 is the N-Channel logic enhancement mode power field RDS(ON) 2.7 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS (ON) 8.8 m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design f

 9.4. Size:870K  matsuki electric
 me7648s me7648s-g.pdf

ME7642-G ME7642-G

ME7648S/ME7648S-G N-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7648S is the N-Channel logic enhancement mode power RDS(ON) 3.1m @VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS (ON) 5.5 m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extrem

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MFE960 | AONR32314 | STF150N10F7 | SH8K26

 

 
Back to Top