MEE3716F - аналоги и даташиты транзистора

 

MEE3716F - Даташиты. Аналоги. Основные параметры


   Наименование производителя: MEE3716F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 36.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 30.3 ns
   Cossⓘ - Выходная емкость: 702 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для MEE3716F

   - подбор ⓘ MOSFET транзистора по параметрам

 

MEE3716F Datasheet (PDF)

 ..1. Size:1632K  matsuki electric
 mee3716f.pdf pdf_icon

MEE3716F

Preliminary-MEE3716F N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3716F is a N-Channel enhancement mode power field effect RDS(ON)14m@VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Low Gate Charge technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on st

 7.1. Size:1367K  matsuki electric
 mee3716t.pdf pdf_icon

MEE3716F

MEE3716T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3716T is a N-Channel enhancement mode power field effect RDS(ON)14m@VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Low Gate Charge technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on state resistan

 8.1. Size:1198K  matsuki electric
 mee3710t.pdf pdf_icon

MEE3716F

MEE3710T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3710T is a N-Channel enhancement mode power field effect RDS(ON)23m@VGS=10V transistors, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

 8.2. Size:1328K  matsuki electric
 mee3712t.pdf pdf_icon

MEE3716F

MEE3712T N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712T is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ME95N10F-G , ME96N03-G , MEE2348 , MEE2348-G , MEE3710T , MEE3712F , MEE3712H , MEE3712T , IRFB4227 , MEE3716T , MEE3718T , MEE4292-G , MEE4292HP-G , MEE4292HT , MEE4292K-G , MEE4292P-G , MEE4292T .

History: STP20NM60A | IPG16N10S4-61A | IXFH6N100F | TJ10S04M3L | MEE4292-G | MEE4292P-G | IPG20N04S4-18A

 

 
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