Справочник MOSFET. MEE4292P-G

 

MEE4292P-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MEE4292P-G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 59.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 48.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 48.5 ns
   Cossⓘ - Выходная емкость: 739 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для MEE4292P-G

   - подбор ⓘ MOSFET транзистора по параметрам

 

MEE4292P-G Datasheet (PDF)

 ..1. Size:918K  matsuki electric
 mee4292p-g.pdf pdf_icon

MEE4292P-G

MEE4292P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON17.2m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.1. Size:866K  matsuki electric
 mee4292-g.pdf pdf_icon

MEE4292P-G

MEE4292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

 7.2. Size:1157K  matsuki electric
 mee4292ht.pdf pdf_icon

MEE4292P-G

MEE4292HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

 7.3. Size:895K  matsuki electric
 mee4292hp-g.pdf pdf_icon

MEE4292P-G

MEE4292HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4292HP-G is a N-Channel enhancement mode power field RDS(ON)12m@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... MEE3712T , MEE3716F , MEE3716T , MEE3718T , MEE4292-G , MEE4292HP-G , MEE4292HT , MEE4292K-G , AON7408 , MEE4292T , MEE42942-G , MEE4294HP-G , MEE4294HT , MEE4294K , MEE4294K2 , MEE4294K2-G , MEE4294K-G .

History: SMG2370N | SWI1N55D | AP30P30Q | CES2317 | SI6968BEDQ

 

 
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