Справочник MOSFET. FDMS7658AS

 

FDMS7658AS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMS7658AS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 89 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 49 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
   Тип корпуса: POWER56
     - подбор MOSFET транзистора по параметрам

 

FDMS7658AS Datasheet (PDF)

 ..1. Size:474K  1
fdms7658as.pdfpdf_icon

FDMS7658AS

FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma

 ..2. Size:470K  fairchild semi
fdms7658as.pdfpdf_icon

FDMS7658AS

September 2009FDMS7658ASN-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mFeatures General DescriptionThe FDMS7658AS has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 Apackage technologies have been combined to offer the lowest

 ..3. Size:474K  onsemi
fdms7658as.pdfpdf_icon

FDMS7658AS

FDMS7658ASN-Channel PowerTrench SyncFETTM30 V, 176 A, 1.9 mGeneral DescriptionFeaturesThe FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apackage technologies have been combined to offer the lowest Max rDS(on) = 2.2 m at VGS = 7 V, ID = 26 ArDS(on) while ma

 7.1. Size:305K  fairchild semi
fdms7656as.pdfpdf_icon

FDMS7658AS

September 2009FDMS7656ASN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS7656AS has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.9 m at VGS = 7 V, ID = 27 Apackage technologies have been combined to offer the lowest

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CET04N10 | DMP22M2UPS-13 | STD3N30T4 | H5N2004DS

 

 
Back to Top

 


 
.