HCD90R800 - аналоги, параметры транзистора - Справочник транзисторов

HCD90R800 даташит

..1. Size:595K semihow
hcd90r800.pdf pdf_icon

Apr. 2023 HCD90R800 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 6.7 A Excellent stability and uniformity RDS(on), max 0.8 100% Avalanche Tested Built-in ESD Diode Qg, Typ 17.4 nC Application Package & Internal Circuit D-PAK SYMBOL Swit

8.1. Size:594K semihow
hcd90r1k6.pdf pdf_icon

Apr. 2023 HCD90R1K6 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 3.8 A Excellent stability and uniformity RDS(on), max 1.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit D-PAK SYMBOL Switc

8.2. Size:596K semihow
hcd90r450.pdf pdf_icon

Apr 2023 HCD90R450 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 10.7 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit D-PAK SYMBOL Switc

8.3. Size:595K semihow
hcd90r1k0.pdf pdf_icon

Apr. 2023 HCD90R1K0 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 5.5 A Excellent stability and uniformity RDS(on), max 1.0 100% Avalanche Tested Built-in ESD Diode Qg, Typ 13.7 nC Application Package & Internal Circuit D-PAK SYMBOL Swit

Другие MOSFET... HCD65R450 , HCD65R830 , HCD70R910 , HCD80R1K2 , HCD80R1K4 , HCD90R1K0 , HCD90R1K6 , HCD90R450 , 7N60 , HCF65R320 , HCF65R550 , HCF70R360 , HCF70R600 , HCF70R910 , HCFL60R115 , HCFL60R150 , HCFL60R190 .