STM6970 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STM6970
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Qgⓘ - Общий заряд затвора: 13 nC
Cossⓘ - Выходная емкость: 135 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: SOP8
STM6970 Datasheet (PDF)
stm6970.pdf
GreenProductSTM6970aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.25 @ VGS=10VSuface Mount Package.60V 7A34 @ VGS=4.5V D 5 4 G6 3D S7 2 SDSO-8D 8 1S1ABSOLUTE MAXIMUM RATINGS (TA=25
stm6920.pdf
S T M6920S amHop Microelectronics C orp. Aug,18 2005 ver1.2Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.25 @ V G S = 10V40V 7AS urface Mount Package.45 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2A
stm6967.pdf
GreenProductSTM6967aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.86 @ VGS=-10VSuface Mount Package.-60V -4A125 @ VGS=-4.5VD 5 4 G6 3D S7 2D SS O-8D 8 1S1(TA=25C unless otherwise noted)ABS
stm6928.pdf
GreenProductSTM6928aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14 @ VGS=10VSuface Mount Package.40V 9.5A16 @ VGS=4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi
stm6926.pdf
GreenProductS TM6926S amHop Microelectronics C orp.Mar.29 ,2007Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.16 @ VG S = 10VS urface Mount Package.8.5A40V18 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5S O-81
stm6914.pdf
GreenProductSTM6914aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.32 @ VGS=10VSuface Mount Package.30V 6.5A52 @ VGS=4.5V D2 5 4 G 26D2 3S 2D1 7 2G 1SO-8D1 8 1S 11ABSOLUTE MAXIMUM RATINGS
stm6968.pdf
S TM6968S amHop Microelectronics C orp.Nov 12.2006Dual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.60 @ VGS = 10V60V 5A Surface Mount Package.70 @ VGS =4.5VESD Protected.D1 D1 D2 D28 7 6 5SO-811 2 3 4S 1 G 1 S 2 G 2ABS OLUTE
stm6922.pdf
GreenProductS TM6922S amHop Microelectronics C orp.Jan.22 ,2007Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.26 @ VG S = 10VS urface Mount Package.40V 7A33 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5S O-811
stm6960a.pdf
GreenrrPPrPrProdSTM6960AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.71 @ VGS=10VSuface Mount Package.60V 4A92 @ VGS=4.5V5 4 G 2D26 3D2 S 27 2D1 G 1SO-8D1 8 1S 11(TA=25C un
stm6962.pdf
GreenProductSTM6962SamHop Microelectronics Corp.Aug 29.2006Dual N-Channel Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) ( m ) MaxRugged and reliable.36 @ VGS = 10V60V 6.5ASurface Mount Package.42 @ VGS = 4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS
stm6916.pdf
GreenProductSTM6916aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=10VSuface Mount Package.30V 10A16 @ VGS=4.5V 5 4D2 G 26 3D2 S 2D1 7 2 G 1SO-88 1D1 S 11ABSOLUTE MAXIMUM RATINGS
stm6915.pdf
S TM6915S amHop Microelectronics C orp.Dec, 12 2006Dual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.19 @ VG S = 10V30V 8.5AS urface Mount Package.28 @ VG S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2ABS OLUTE MAX
stm6912.pdf
S T M6912S amHop Microelectronics C orp. Aug,18 2005 ver 1.2Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.32 @ V G S = 10V30V6AS urface Mount Package.57 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2
stm6924.pdf
GreenProductSTM6924aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.28 @ VGS=10VSuface Mount Package.40V 6.8A46 @ VGS=4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi
stm6966.pdf
GreenProductSTM6966aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.80 @ VGS=10VSuface Mount Package.60V 4.5A110 @ VGS=4.5VESD Protected.D 5 4 GD 6 3S7 2D SS O-88 1D S1(TA=25C unless otherw
stm6960.pdf
GreenProductSTM6960aS mHop Microelectronics C orp.Ver 1.2Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.55 @ VGS=10VSuface Mount Package.60V 5.5A70 @ VGS=4.5VD25 4G26 3D2 S2D1 7 2G1SO-88 1D1 S11(TA=25C unless otherwise
stm6930a.pdf
GreenProductS TM6930AS amHop Microelectronics C orp.J une,8 2006 ver1.4Dual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.50 @ VG S = 10V55V 4.8AS urface Mount Package.75 @ VG S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G
stm6920a.pdf
S T M6920AS amHop Microelectronics C orp. Apr,08.2005Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.35 @ V G S = 10V40V 5AS urface Mount Package.62 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2ABS OLU
stm6913a.pdf
GreenProductS TM6913AS amHop Microelectronics C orp.Aug. 10 2012 ver1.2Dual N-Channel E nhancement Mode Field E ffect TransistorffffPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.18 @ VGS = 10V30V 8.2AS urface Mount Package.ff25 @ VGS =4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918