Справочник MOSFET. HCS60R150ST

 

HCS60R150ST MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HCS60R150ST
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 21.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 50 nC
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: TO220FT

 Аналог (замена) для HCS60R150ST

 

 

HCS60R150ST Datasheet (PDF)

 ..1. Size:421K  semihow
 hcs60r150st.pdf

HCS60R150ST HCS60R150ST

April 2020HCS60R150ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 21.4 A Excellent stability and uniformityRDS(on), max 0.15 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.1. Size:401K  semihow
 hcs60r260s.pdf

HCS60R150ST HCS60R150ST

Sep 2020HCS60R260S600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.2. Size:402K  semihow
 hcs60r260st.pdf

HCS60R150ST HCS60R150ST

Sep 2020HCS60R260ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.3. Size:364K  semihow
 hcs60r099.pdf

HCS60R150ST HCS60R150ST

Dec 2019HCS60R099600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 30.7 A Excellent stability and uniformityRDS(on), max 99 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220F SYMBOL Swit

 8.4. Size:351K  semihow
 hcs60r900s.pdf

HCS60R150ST HCS60R150ST

June 2019HCS60R900S600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 5.0 A Excellent stability and uniformityRDS(on), max 0.9 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.3 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.5. Size:370K  semihow
 hcs60r099st.pdf

HCS60R150ST HCS60R150ST

Dec 2019HCS60R099ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 30.7 A Excellent stability and uniformityRDS(on), max 99 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

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