Справочник MOSFET. STM6926

 

STM6926 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STM6926
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.5 A
   Qgⓘ - Общий заряд затвора: 12 nC
   Cossⓘ - Выходная емкость: 220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для STM6926

 

 

STM6926 Datasheet (PDF)

 ..1. Size:141K  samhop
 stm6926.pdf

STM6926 STM6926

GreenProductS TM6926S amHop Microelectronics C orp.Mar.29 ,2007Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.16 @ VG S = 10VS urface Mount Package.8.5A40V18 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5S O-81

 8.1. Size:720K  samhop
 stm6920.pdf

STM6926 STM6926

S T M6920S amHop Microelectronics C orp. Aug,18 2005 ver1.2Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.25 @ V G S = 10V40V 7AS urface Mount Package.45 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2A

 8.2. Size:167K  samhop
 stm6928.pdf

STM6926 STM6926

GreenProductSTM6928aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14 @ VGS=10VSuface Mount Package.40V 9.5A16 @ VGS=4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi

 8.3. Size:131K  samhop
 stm6922.pdf

STM6926 STM6926

GreenProductS TM6922S amHop Microelectronics C orp.Jan.22 ,2007Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).ID R DS (ON) ( m ) MaxVDS SR ugged and reliable.26 @ VG S = 10VS urface Mount Package.40V 7A33 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5S O-811

 8.4. Size:184K  samhop
 stm6924.pdf

STM6926 STM6926

GreenProductSTM6924aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.28 @ VGS=10VSuface Mount Package.40V 6.8A46 @ VGS=4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi

 8.5. Size:697K  samhop
 stm6920a.pdf

STM6926 STM6926

S T M6920AS amHop Microelectronics C orp. Apr,08.2005Dual N-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) Max R ugged and reliable.35 @ V G S = 10V40V 5AS urface Mount Package.62 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2ABS OLU

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