HRLF180N10K - параметры транзистора MOSFET, его аналоги, datasheet

HRLF180N10K Datasheet (PDF)

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Jan 2016HRLF180N10K100V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 100 V ID = 40 A1 Unrivalled Gate Charge : 94 nC (Typ.) Lower RDS(ON) : 16 (Typ.) @VGS=10V Lower RDS(ON) : 17 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 100 VVGS Gate-Source Voltage

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Jan 2016HRLF150N10K100V N-Channel Trench MOSFET8DFN 5x6FEATURES BVDSS = 100 V ID = 50 A1 Unrivalled Gate Charge : 80 nC (Typ.) Lower RDS(ON) : 13 (Typ.) @VGS=10V Lower RDS(ON) : 14 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 100 VVGS Gate-Source Voltage

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July 2017 HRLF190N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 31 A Advanced Trench Process Technology RDS(on), typ @10V 16 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 20 m Lead free, Halogen Free Application Package & Internal Circu

9.3. Size:775K semihow
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July 2017 HRLF110N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 42 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci