Jan 2016HRLFS190N03K30V N-Channel Trench MOSFET8DFN 3x3FEATURES BVDSS = 30 V ID = 28 A1 Unrivalled Gate Charge : 12 nC (Typ.) Lower RDS(ON) : 16 (Typ.) @VGS=10V Lower RDS(ON) : 20 (Typ.) @VGS=4.5V 100% Avalanche TestedAbsolute Maximum Ratings TJ=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 30 VVGS Gate-Source Voltage

May 2020HRLFS136N10P100V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Speed Power Switching, Logic LevelBVDSS 100 V Enhanced Body diode dv/dt capabilityID 48 A Enhanced Avalanche RuggednessRDS(on), typ @10V 11.3 m 100% UIS Tested, 100% Rg Tested Lead free, Halogen FreeRDS(on), typ @4.5V 16.7 mApplicationPackage & Intern

March 2020HRLFS72N06P65V N-Channel Trench MOSFETFeatures Key ParametersParameter Value UnitHigh Speed Power Switching, Logic LevelBVDSS 65 VEnhanced Body diode dv/dt capabilityID 58 AEnhanced Avalanche RuggednessRDS(on), typ @10V 6.0 m100% UIS Tested, 100% Rg TestedRDS(on), typ @4.5V 9.6 mLead free, Halogen FreeApplicationPackage & Internal CircuitSynchronous

Feb 2020HRLFS55N03K30V N-Channel Trench MOSFETFeatures Key ParametersParameter Value UnitLow Dense Cell Design, Logic LevelBVDSS 30 VReliable and RuggedID 66 AAdvanced Trench Process TechnologyRDS(on), typ @10V 4.2 m100% UIS Tested, 100% Rg TestedRDS(on), typ @4.5V 5.7 mLead free, Halogen FreeApplicationPackage & Internal CircuitPower Management in Inverter S

June 2017 HRLFS90N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID 38 A Advanced Trench Process Technology RDS(on), typ @10V 9.0 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 13.0 m Lead free, Halogen Free Application Package & Internal Ci