OSG55R074HZF datasheet, аналоги, основные параметры

Наименование производителя: OSG55R074HZF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 278 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 550 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 47 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 98.1 ns

Cossⓘ - Выходная емкость: 350.1 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.074 Ohm

Тип корпуса: TO247

Аналог (замена) для OSG55R074HZF

- подборⓘ MOSFET транзистора по параметрам

 

OSG55R074HZF даташит

 ..1. Size:414K  oriental semi
 osg55r074hzf.pdf pdf_icon

OSG55R074HZF

OSG55R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 4.1. Size:388K  oriental semi
 osg55r074hszf.pdf pdf_icon

OSG55R074HZF

OSG55R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 5.1. Size:418K  oriental semi
 osg55r074fzf.pdf pdf_icon

OSG55R074HZF

OSG55R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 6.1. Size:398K  oriental semi
 osg55r070hf.pdf pdf_icon

OSG55R074HZF

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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