Справочник MOSFET. OSG55R092FF

 

OSG55R092FF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG55R092FF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 38.6 nC
   trⓘ - Время нарастания: 79.3 ns
   Cossⓘ - Выходная емкость: 244.3 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.092 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

OSG55R092FF Datasheet (PDF)

 ..1. Size:871K  oriental semi
osg55r092ff.pdfpdf_icon

OSG55R092FF

OSG55R092FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:929K  oriental semi
osg55r092hf.pdfpdf_icon

OSG55R092FF

OSG55R092HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 6.1. Size:912K  oriental semi
osg55r099hszf.pdfpdf_icon

OSG55R092FF

OSG55R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 7.1. Size:398K  oriental semi
osg55r070hf.pdfpdf_icon

OSG55R092FF

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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History: SIHG28N60EF

 

 
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