OSG55R092HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: OSG55R092HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 101 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 79.3 ns
Cossⓘ - Выходная емкость: 244.3 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.092 Ohm
Тип корпуса: TO247
Аналог (замена) для OSG55R092HF
OSG55R092HF Datasheet (PDF)
osg55r092hf.pdf

OSG55R092HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg55r092ff.pdf

OSG55R092FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg55r099hszf.pdf

OSG55R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
osg55r070hf.pdf

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Другие MOSFET... OSG55R028HF , OSG55R028HTF , OSG55R030HZF , OSG55R070FF , OSG55R070HF , OSG55R074FZF , OSG55R074HZF , OSG55R092FF , 2SK3568 , OSG55R099HSZF , OSG55R108FZF , OSG55R108HZF , OSG55R108KZF , OSG55R108PZF , OSG55R140FF , OSG55R140PF , OSG55R160HZF .
History: TK15H50C | BFD77 | CJ2306 | FS14SM-12 | NCES075R026T4 | IRF7834TRPBF | 4614
History: TK15H50C | BFD77 | CJ2306 | FS14SM-12 | NCES075R026T4 | IRF7834TRPBF | 4614



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