OSG55R290PF datasheet, аналоги, основные параметры

Наименование производителя: OSG55R290PF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 83 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 550 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.3 ns

Cossⓘ - Выходная емкость: 80.7 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm

Тип корпуса: TO220

Аналог (замена) для OSG55R290PF

- подборⓘ MOSFET транзистора по параметрам

 

OSG55R290PF даташит

 ..1. Size:897K  oriental semi
 osg55r290pf.pdf pdf_icon

OSG55R290PF

OSG55R290PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:397K  oriental semi
 osg55r290af.pdf pdf_icon

OSG55R290PF

OSG55R290AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:431K  oriental semi
 osg55r290df.pdf pdf_icon

OSG55R290PF

OSG55R290DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:922K  oriental semi
 osg55r290ff.pdf pdf_icon

OSG55R290PF

OSG55R290FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... OSG55R108PZF, OSG55R140FF, OSG55R140PF, OSG55R160HZF, OSG55R160PZF, OSG55R290AF, OSG55R290DF, OSG55R290FF, NCEP15T14, OSG55R380AF, OSG55R380DF, OSG55R380FF, OSG55R380PF, OSG55R580AF, OSG55R580DEF, OSG55R580DF, OSG55R580FEF