Справочник MOSFET. OSG55R380AF

 

OSG55R380AF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG55R380AF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 63 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 22.8 ns
   Cossⓘ - Выходная емкость: 63.1 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

OSG55R380AF Datasheet (PDF)

 ..1. Size:398K  oriental semi
 osg55r380af.pdf pdf_icon

OSG55R380AF

OSG55R380AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:432K  oriental semi
 osg55r380df.pdf pdf_icon

OSG55R380AF

OSG55R380DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:925K  oriental semi
 osg55r380ff.pdf pdf_icon

OSG55R380AF

OSG55R380FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:959K  oriental semi
 osg55r380pf.pdf pdf_icon

OSG55R380AF

OSG55R380PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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History: 12P10G-TQ2-T | 2SK3430-ZJ | PSMN2R0-30BL | R6535KNZ1 | IXTA08N100D2 | TPCS8104 | VSE002N03MS-G

 

 
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