OSG60R038HT3ZF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: OSG60R038HT3ZF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 390 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 78 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 54.4 ns
Cossⓘ - Выходная емкость: 340 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm
Тип корпуса: TO247
Аналог (замена) для OSG60R038HT3ZF
OSG60R038HT3ZF Datasheet (PDF)
osg60r038ht3zf.pdf

OSG60R038HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
osg60r030htzf.pdf

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
osg60r031hzf.pdf

OSG60R031HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
osg60r035tt5zf.pdf

OSG60R035TT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
Другие MOSFET... OSG60R030HT3ZF , OSG60R030HTZF , OSG60R030HZF , OSG60R031HT3ZF , OSG60R031HZF , OSG60R035HF , OSG60R035HT5ZF , OSG60R035TT5ZF , RU6888R , OSG60R040HF , OSG60R041HZF , OSG60R055TT3F , OSG60R055TT3ZF , OSG60R060HMF , OSG60R060HT3F , OSG60R060HT3ZF , OSG60R060KT3ZF .
History: DMP3056LDM | IXFH96N20P | 2SK399 | AP60P20Q | NTD4805N-1G | STFI34N65M5 | SL2302
History: DMP3056LDM | IXFH96N20P | 2SK399 | AP60P20Q | NTD4805N-1G | STFI34N65M5 | SL2302



Список транзисторов
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