Справочник MOSFET. OSG60R038HT3ZF

 

OSG60R038HT3ZF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG60R038HT3ZF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 390 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 78 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 54.4 ns
   Cossⓘ - Выходная емкость: 340 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для OSG60R038HT3ZF

   - подбор ⓘ MOSFET транзистора по параметрам

 

OSG60R038HT3ZF Datasheet (PDF)

 ..1. Size:967K  oriental semi
osg60r038ht3zf.pdfpdf_icon

OSG60R038HT3ZF

OSG60R038HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 6.1. Size:387K  oriental semi
osg60r030htzf.pdfpdf_icon

OSG60R038HT3ZF

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 6.2. Size:962K  oriental semi
osg60r031hzf.pdfpdf_icon

OSG60R038HT3ZF

OSG60R031HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 6.3. Size:934K  oriental semi
osg60r035tt5zf.pdfpdf_icon

OSG60R038HT3ZF

OSG60R035TT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

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History: SSM6K405TU

 

 
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