OSG60R1K8AF datasheet, аналоги, основные параметры

Наименование производителя: OSG60R1K8AF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 22.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.6 ns

Cossⓘ - Выходная емкость: 14 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm

Тип корпуса: TO251

Аналог (замена) для OSG60R1K8AF

- подборⓘ MOSFET транзистора по параметрам

 

OSG60R1K8AF даташит

 ..1. Size:380K  oriental semi
 osg60r1k8af.pdf pdf_icon

OSG60R1K8AF

OSG60R1K8AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:414K  oriental semi
 osg60r1k8df.pdf pdf_icon

OSG60R1K8AF

OSG60R1K8DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:984K  oriental semi
 osg60r1k8pf.pdf pdf_icon

OSG60R1K8AF

OSG60R1K8PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:399K  oriental semi
 osg60r1k8ff.pdf pdf_icon

OSG60R1K8AF

OSG60R1K8FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... OSG60R190DT3ZF, OSG60R190DTF, OSG60R190FSZF, OSG60R190FT3ZF, OSG60R1K2AF, OSG60R1K2DF, OSG60R1K2FF, OSG60R1K2PF, AON7506, OSG60R1K8DF, OSG60R1K8FF, OSG60R1K8PF, OSG60R200FSZF, OSG60R200JSZF, OSG60R200PSZF, OSG60R260AF, OSG60R260DF