Справочник MOSFET. OSG60R1K8DF

 

OSG60R1K8DF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: OSG60R1K8DF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 22.3 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 3 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 7 nC
   Время нарастания (tr): 6.6 ns
   Выходная емкость (Cd): 14 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.8 Ohm
   Тип корпуса: TO252

 Аналог (замена) для OSG60R1K8DF

 

 

OSG60R1K8DF Datasheet (PDF)

 ..1. Size:414K  oriental semi
 osg60r1k8df.pdf

OSG60R1K8DF OSG60R1K8DF

OSG60R1K8DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:380K  oriental semi
 osg60r1k8af.pdf

OSG60R1K8DF OSG60R1K8DF

OSG60R1K8AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:984K  oriental semi
 osg60r1k8pf.pdf

OSG60R1K8DF OSG60R1K8DF

OSG60R1K8PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:399K  oriental semi
 osg60r1k8ff.pdf

OSG60R1K8DF OSG60R1K8DF

OSG60R1K8FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top