Справочник MOSFET. OSG60R2K2AF

 

OSG60R2K2AF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG60R2K2AF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 20 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 11 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

OSG60R2K2AF Datasheet (PDF)

 ..1. Size:950K  oriental semi
 osg60r2k2af.pdf pdf_icon

OSG60R2K2AF

OSG60R2K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 4.1. Size:374K  oriental semi
 osg60r2k2asf.pdf pdf_icon

OSG60R2K2AF

OSG60R2K2ASF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 5.1. Size:401K  oriental semi
 osg60r2k2dsf.pdf pdf_icon

OSG60R2K2AF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 5.2. Size:980K  oriental semi
 osg60r2k2df.pdf pdf_icon

OSG60R2K2AF

OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FHD80N07A | AUIRFR3607 | 2SK2525-01 | AP55T10GH-HF | MTB1D7N03ATH8 | 2SK610 | RSF010P03TL

 

 
Back to Top

 


 
.