FDMS86200 - Даташиты. Аналоги. Основные параметры
Наименование производителя: FDMS86200
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 150 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: POWER56
Аналог (замена) для FDMS86200
FDMS86200 Datasheet (PDF)
fdms86200.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86200.pdf
Preliminary DatasheetApril 2010FDMS86200N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 Abeen especially tailored to minimize the on-state resistance
fdms86200.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86200dc.pdf
December 2013FDMS86200DCN-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN packageincorporates Shielded Gate technology. Advancements in both Max rDS(on) =
Другие MOSFET... FDMS86102LZ , STM6610 , FDMS86103L , STM6375 , FDMS86104 , STM4973 , FDMS86105 , STM4953 , 13N50 , FDMS86201 , FDMS8622 , STM4952 , FDMS86252 , FDMS86300 , FDMS86322 , FDMS86500L , FDMS86520L .
History: STD36NH02L | BUZ345
History: STD36NH02L | BUZ345
Список транзисторов
Обновления
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