FDMS8888 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDMS8888
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 21 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 23 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
Тип корпуса: POWER56
FDMS8888 Datasheet (PDF)
fdms8888.pdf
July 2011FDMS8888 NNNNN-Channel PowerTrench MOSFET 30 V, 21 A, 9.5 mFeaturesGeneral Description Max rDS(on) = 9.5 m at VGS = 10 V, ID = 13.5 Ahas been designed to minimize losses in powerThe FDMS8888andconversion application. Advancements in both silicon Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowe
fdms8888.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8880.pdf
October 2014FDMS8880N-Channel PowerTrench MOSFET 30 V, 21 A, 8.5 mFeatures General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.5 AThe FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 13.0 m at VGS = 4.5 V, ID = 10.9 Apackage technologies have been combined to offer the lowest
fdms8880.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8848nz.pdf
May 2009FDMS8848NZN-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 mFeatures General DescriptionThe FDMS8848NZ has been designed to minimize losses in Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22.8 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.1 m at VGS = 4.5 V, ID = 17.5 Apackage technologies have been combined to offer the lowest
fdms8820.pdf
October 2014FDMS8820N-Channel PowerTrench MOSFET30 V, 116 A, 2.0 mFeatures General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 Aringing of DC/DC converters using either synchronous or Advanced Pac
fdms8820.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918