FDN352AP - описание и поиск аналогов

August 2005 FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description 1.3 A, 30V RDS(ON) = 180 m @ VGS = 10V This P-Channel Logic Level MOSFET is produced using Fair- 1.1 A, 30V RDS(ON) = 300 m @ VGS = 4.5V child Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and High pe

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFET P-Channel MOSFET FDN352AP (KDN352AP) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features VDS (V) =-30V 1 2 ID =-1.3 A (VGS =-10V) +0.1 +0.05 0.95 -0.1 0.1-0.01 RDS(ON) 180m (VGS =-10V) +0.1 1.9 -0.1 RDS(ON) 300m (VGS =-4.5V) 1. Gate 2. Source D 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol R

SMD Type MOSFET P-Channel MOSFET FDN352AP (KDN352AP) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-30V ID =-1.3 A (VGS =-10V) 1 2 RDS(ON) 180m (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 300m (VGS =-4.5V) 1. Gate D 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symb

March 1998 FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode power 1.9 A, 30 V, RDS(ON) = 0.090 @ VGS = 4.5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.060 @ VGS = 10 V. proprietary, high cell density, DMOS technology. This very high Industry sta

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

January 2003 FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 1.5 A, 30 V. RDS(ON) = 125 m @ VGS = 10 V using Fairchild Semiconductor advanced Power Trench RDS(ON) = 200 m @ VGS = 4.5 V process that has been especially tailored to minimize the on-state re

April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V using Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Very fast switching

FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 1.9 A, 30 V, RDS(ON) = 0.090 @ VGS = 4.5 V SuperSOTTM-3 N-Channel logic level enhancement mode power field RDS(ON) = 0.060 @ VGS = 10 V. effect transistors are produced using ON Semiconductor's proprietary, high Industry standard outline SOT-23 surface mount cell density, D

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

January 2003 FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 1.5 A, 30 V. RDS(ON) = 125 m @ VGS = 10 V using Fairchild Semiconductor advanced Power Trench RDS(ON) = 200 m @ VGS = 4.5 V process that has been especially tailored to minimize the on-state re

FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON) = 0.060 @ VGS = 4.5 V. using ON Semiconductor's advanced PowerTrench process that has been especially tailored Very fast switching. to minimize on-state resistance and yet maintain Low gate cha

FDN359AN N-Channel Enhancement Mode MOSFET Feature DS(ON) GS 30V/3.0A, R = 45m (MAX) @V = 10V. DS(ON) GS R =50m (MAX) @V = 4.5V. DS(ON) GS R =65m (MAX) @V = 2.5V. DS(ON) . Super High dense cell design for extremely low R Reliable and Rugged. SOT-23 SOT-23 for Surface Mount Package. A pplications Power Management Portable Equipment and Battery Powered System